BCP060T_15 Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY pHEMT POWER FET CHIP

BCP060T
HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
The BeRex BCP060T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 600 micron gate width
making the product ideally suited for amplifier applications where high-gain and medium power from DC to 26
GHz. The product may be used in either wideband or narrow-band applications. The BCP060T is produced using
state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 28 dBm Typical Output Power
• 12 dB Typical Gain @ 12 GHz
• 55% PAE Typical @12 GHz
• 0.25 X 600 µm Recessed Gate
• Also available in 70 mil. ceramic package
(BCP060T-70)
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
DC CHARACTERISTICS Ta = 25° C
SYMBOL
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETER/TEST CONDITIONS
Saturated Drain Current (Vgs = 0V, Vds = 2V)
Transconductance (Vds = 3V, Vgs = 50% Idss)
Pinch-off Voltage (Ids = 0.6 mA, Vds = 2V)
Drain Breakdown Voltage (Ig = 0.6 mA, source open)
Source Breakdown Voltage (Ig = 0.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
120
- 2.5
TYPICAL
180
240
-1.1
-15
-13
75
MAX.
240
- 0.5
-12
UNIT
mA
mS
V
V
V
°C/W
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
50 Ohm Noise Figure (Vds=2V, Idss=15 mA)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
MIN.
27.0
11.0
TYPICAL
28.0
28.5
12.0
9.0
55
55
1.34
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
MAX. UNIT
dBm
dB
%
dB
January 2015