BCP060T2 Datasheet, PDF (2/5 Pages) BeRex Corporation – HIGH EFFICIENCY pHEMT POWER FET CHIP

BCP060T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
25.5
26.0
12.5
9.5
TYPICAL
27.0
28.0
13.5
10.5
60
60
MAX.
UNIT
dBm
dB
%
MAXIMUM RATING (Ta = 25° C)
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-8 V
Idss
30 mA
24 dBm
175° C
-60° C - 150° C
2.1 W
CONTINUOUS
8V
-3 V
Idss
5 mA
@3dB Compression
150° C
-60° C - 150° C
1.7 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
Frequency = 12GHz
Vds= 8 V, Ids = 50% Idss (Tuned for Power)
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015