BCP060T2 Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY pHEMT POWER FET CHIP

HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
BCP060T2
The BeRex BCP060T2 is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 600 micron gate width
making it ideally suited for applications requiring high-gain and medium power in the 1000 MHz to 26.5 GHz
frequency range. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The
BCP060T2 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 29 dBm Typical Output Power
• 12 dB Typical Power Gain @ 12 GHz
• 0.25 X 600 Micron Recessed Gate
• 2 Gate Pads / 2 Drain Pads
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
DC CHARACTERISTICS Ta = 25° C
SYMBOL
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETER/TEST CONDITIONS
Saturated Drain Current (Vgs = 0V, Vds = 2V)
Transconductance (Vds = 3V, Vgs = 50% Idss)
Pinch-off Voltage (Ids = 0.6 mA, Vds = 2V)
Drain Breakdown Voltage (Ig = 0.6 mA, source open)
Source Breakdown Voltage (Ig = 0.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
120
- 2.5
TYPICAL
180
240
-1.1
-16
-14
65
MAX.
240
- 0.5
-12
UNIT
mA
mS
V
V
V
°C/W
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
27.5
27.5
11.0
8.0
TYPICAL
29.0
29.0
12.0
9.0
65
60
MAX.
UNIT
dBm
dB
%
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015