BCP060T Datasheet, PDF (2/5 Pages) BeRex Corporation – HIGH EFFICIENCY pHEMT POWER FET CHIP

BCP060T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) T_a = 25° C
SYMBOL
P_1dB
G_1dB
PARAMETER/TEST CONDITIONS
Output Power @ P_1dB (V_ds = 8V, I_ds = 50%
I_dss)
Gain @ P_1dB (V_ds = 8V, Ids = 50% I_dss)
PAE
PAE @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
NF
50 Ohm Noise Figure (V_ds=2V, I_dss=15 mA) 12 GHz
I_dss
Saturated Drain Current (V_gs = 0V, V_ds = 2V)
G_m
Transconductance (V_ds = 3V, V_gs = 50% I_dss)
V_p
Pinch-off Voltage (I_ds = 0.6 mA, V_ds = 2V)
BV_gd Drain Breakdown Voltage (Ig = 0.6 mA, source open)
BV_gs Source Breakdown Voltage (Ig = 0.6 mA, drain open)
R_th
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
11.0
120
- 2.5
TYPICAL
27.5
27.0
12.5
9.5
55
50
1.34
180
240
-1.1
-15
-13
75
MAX.
240
- 0.5
-12
UNIT
dBm
dB
%
dB
mA
mS
V
V
V
°C/W
MAXIMUM RATING (T_a = 25° C)
SYMBOLS
V_ds
V_gs
I_ds
I_gsf
P_in
T_ch
T_stg
P_t
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
I_dss
30 mA
25 dBm
175° C
-60° C - 150° C
2.6 W
CONTINUOUS
8V
-3 V
I_dss
10 mA
@3dB Compression
150° C
-60° C - 150° C
2.2 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
www.berex.com
BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011