BCP060T Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY pHEMT POWER FET CHIP

BCP060T
HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
The BeRex BCP060T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 600 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP060T is produced using state of the art metallization with SI₃N₄ passivation and is screened to
assure reliability.
PRODUCT FEATURES
 28 dBm Typical Output Power
 12 dB Typical Gain @ 12 GHz
 0.25 X 600 Micron Recessed Gate
APPLICATIONS
 Commercial
 Military / Hi-Rel.
 Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T_a = 25° C
SYMBOL
P_1dB
G_1dB
PARAMETER/TEST CONDITIONS
Output Power @ P_1dB (V_ds = 8V, I_ds = 50%
I_dss)
Gain @ P_1dB (V_ds = 8V, Ids = 50% I_dss)
PAE
PAE @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
NF
50 Ohm Noise Figure (V_ds=2V, I_dss=15 mA)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
I_dss
Saturated Drain Current (V_gs = 0V, V_ds = 2V)
G_m
Transconductance (V_ds = 3V, V_gs = 50% I_dss)
V_p
Pinch-off Voltage (I_ds = 0.6 mA, V_ds = 2V)
BV_gd Drain Breakdown Voltage (Ig = 0.6 mA, source open)
BV_gs Source Breakdown Voltage (Ig = 0.6 mA, drain open)
R_th
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
27.0
11.0
120
-2.5
TYPICAL
28.0
28.5
12.0
9.0
55
55
1.34
180
240
-1.1
-15
-13
75
www.berex.com
BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
MAX. UNIT
dBm
dB
%
dB
240
mA
mS
-0.5
V
-12
V
V
°C/W
September 2011