BCP040T Datasheet, PDF (2/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP040T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
Noise Figure (Vds = 2V, Ids = 10mA)
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
MIN.
23.0
23.5
13.5
9.5
TYPICAL
24.5
25.0
14.5
10.5
55
50
1.0
MAX.
UNIT
dBm
dB
%
dB
MAXIMUM RATING (Ta = 25° C)
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-8 V
Idss
20 mA
21 dBm
175° C
-60° C - 150° C
1.3 W
CONTINUOUS
8V
-3 V
Idss
3 mA
@ 3dB compression
150° C
-60° C - 150° C
1.1 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
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BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015