BCP040T Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
BCP040T
The BeRex BCP040T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 400 micron gate width
making the product ideally suited for applications requiring high-gain and medium power from DC to 26 GHz. The
product may be used in either wideband or narrow-band applications. The BCP040T is produced using state of the
art metallization with SI3N4 passivation and is screened to assure reliability
PRODUCT FEATURES
• 26 dBm Typical Output Power
• 14 dB Typical Power Gain @ 12 GHz
• 0.25 X 400 Micron Recessed Gate
APPLICATIONS
• Commercial
• Military / Hi-Rel
• Test & Measurement
DC CHARACTERISTICS Ta = 25° C
SYMBOL
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETER/TEST CONDITIONS
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
Transconductance (Vds = 3V, Vgs = 50% Idss)
Pinch-off Voltage (Ids = 400 µA, Vds = 2V)
Drain Breakdown Voltage (Igd = 0.4 mA, source open)
Source Breakdown Voltage (Ig = 0.4 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
80
TYPICAL
120
160
-1.1
-16
-14
120
MAX.
160
UNIT
mA
mS
V
V
V
°C/W
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
Noise Figure (Vds = 2V, Ids = 10mA)
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
MIN.
24.5
23.5
13.0
9.0
TYPICAL
26.0
25.0
14.0
10.0
65
65
1.0
MAX.
UNIT
dBm
dB
%
dB
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015