BCP030T_15 Datasheet, PDF (2/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP030T
ELECTRICAL CHARACTERISTICS (TUNED FOR GAIN) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
50 Ohm Noise Figure (Vds=2V, Ids=15 mA)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
MIN.
22.0
14.5
TYPICAL
23.0
23.0
15.5
11.5
45
45
1.14
MAX. UNIT
dBm
dB
%
dB
MAXIMUM RATINGS (Ta = 25° C)
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
Idss
18 mA
22 dBm
175° C
-60° C - 150° C
1.4 W
CONTINUOUS
8V
-3 V
Idss
3 mA
@ 3dB compression
150° C
-60° C - 150° C
1.2 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/GAIN, PAE (12 GHz)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
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BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015