BCP030T_15 Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP030T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
The BeRex BCP030T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 300 micron gate width
making the product ideally suited for amplifier applications where high-gain and medium power from DC to 26
GHz. The product may be used in either wideband or narrow-band applications. The BCP030T is produced using
state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 25 dBm Typical Output Power
• 14 dB Typical Gain @12 GHz
• 65% PAE Typical @12 GHz
• 0.25 X 300 µm Recessed Gate
• Also available in 70 mil. ceramic package
(BCP030T-70)
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
DC CHARACTERISTICS Ta = 25° C
SYMBOL
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETER/TEST CONDITIONS
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
Transconductance (Vds = 2V, Vgs = 50% Idss)
Pinch-off Voltage (Ids = 0.3 mA, Vds = 2V)
Drain Breakdown Voltage (Ig = 0.3 mA, source open)
Source Breakdown Voltage (Ig = 0.3 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
ELECTRICAL CHARACTERISTICS (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
50 Ohm Noise Figure (Vds=2V, Ids=15 mA)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
MIN.
60
-2.5
MIN.
24.5
13.0
TYPICAL
90
120
-1.1
-15
-13
121
TYPICAL
25.5
25.5
14.0
10.5
65
60
1.14
MAX.
120
-0.5
-12
UNIT
mA
mS
V
V
V
°C/W
MAX. UNIT
dBm
dB
%
dB
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015