BCP020T Datasheet, PDF (2/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP020T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) T_a = 25° C
SYMBOL
P_1dB
G_1dB
PAE
NF
I_dss
G_m
V_p
BV_gd
BV_gs
R_th
PARAMETER/TEST CONDITIONS
Output Power @ P_1dB (V_ds = 8V, I_ds = 50%
I_dss)
Gain @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
PAE @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
50 Ohm Noise Figure (V_ds=2V, I_ds=10 mA
12 GHz
Saturated Drain Current (V_gs = 0V, V_ds = 1.0V)
Transconductance (V_ds = 3V, V_gs = 50% I_dss)
Pinch-off Voltage (I_ds = 0.3 mA, V_ds = 3V)
Drain Breakdown Voltage (I_g = 0.6 mA, source open)
Source Breakdown Voltage (I_g = 0.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
20.0
15.5
40
-2.5
TYPICAL
21.0
21.0
17.0
13.0
45
45
1.09
60
80.0
-1.1
-15
-13
160
MAX. UNIT
dBm
dB
%
dB
80
mA
mS
-0.5
V
-12
V
V
°C/W
MAXIMUM RATING (T_a = 25° C)
SYMBOLS
V_ds
V_gs
I_ds
I_gsf
P_in
T_ch
T_stg
P_t
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
I_dss
11 mA
17 dBm
175° C
-60° C - 150° C
1.0 W
CONTINUOUS
8V
-3 V
I_dss
2 mA
@ 3dB compression
150° C
-60° C - 150° C
0.8 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
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BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011