BCP020T Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP020T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm)
The BeRex BCP020T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 200 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP020T is produced using state of the art metallization with SI₃N₄ passivation and is screened to
assure reliability.
PRODUCT FEATURES
 24 dBm Typical Output Power
 14 dB Typical Gain @ 12 GHz
 0.25 X 200 Micron Recessed Gate
APPLICATIONS
 Commercial
 Military / Hi-Rel.
 Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T_a = 25° C
SYMBOL
P_1dB
G_1dB
PARAMETER/TEST CONDITIONS
Output Power @ P_1dB (V_ds = 8V, I_ds = 50%
I_dss)
Gain @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
PAE
PAE @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
NF
50 Ohm Noise Figure (V_ds=2V, I_ds=10 mA
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
I_dss
Saturated Drain Current (V_gs = 0V, V_ds = 3V)
G_m
Transconductance (V_ds = 3V, V_gs = 50% I_dss)
V_p
Pinch-off Voltage (I_ds = 0.3 mA, V_ds = 3V)
BV_gd Drain Breakdown Voltage (I_g = 0.6 mA, source open)
BV_gs
Source Breakdown Voltage (I_g = 0.6 mA, drain open)
R_th
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
22.5
12.0
40
-2.5
TYPICAL
24.0
24.0
14.0
12.0
60
55
1.09
60
80.0
-1.1
-15
-13
160
MAX. UNIT
dBm
dB
%
dB
80
mA
mS
-0.5
V
-12
V
V
° C/W
www.berex.com
BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011