BCP020T-70 Datasheet, PDF (2/6 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25μm x 200μm gate)

BCP020T-70
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) T_a = 25° C
SYMBOLS
P_1dB
G_1dB
PAE
NF
Ga
I_dss
G_m
V_p
BV_gd
BV_gs
R_th
PARAMETER/TEST CONDITIONS
Output Power @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
Gain @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
PAE @ P_1dB (V_ds = 8V, I_ds = 50% I_dss)
TEST
FREQUENCY
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
Noise Figure (V_ds=2V, I_ds=15mA)
12 GHz
Associated Gain (V_ds=2V, I_ds=15mA)
12 GHz
Saturated Drain Current (V_gs = 0V, V_ds = 1.0V)
Transconductance (V_ds = 3V, Vgs = 50% I_dss)
Pinch-off Voltage (I_ds = 0.2 mA, V_ds = 2V)
Drain Breakdown Voltage (I_g = 0.2mA, source open)
Source Breakdown Voltage (I_g = 0.2mA, drain open)
Thermal Resistance
MIN.
19.0
18.0
12.5
9.5
50
-2.5
TYPICAL
20.5
19.5
13.5
10.5
65
45
0.8
10.5
60.0
80.0
-1.1
-15
-13
460
MAX. UNIT
dBm
dB
%
dB
dB
80
mA
mS
-0.5
V
V
V
° C/W
MAXIMUM RATING (T_a = 25° C)
SYMBOLS
V_ds
V_gs
I_ds
I_gsf
P_in
T_ch
T_stg
P_t
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
I_dss
11 mA
17 dBm
175° C
-60° C - 150° C
295 mW
CONTINUOUS
8V
-3 V
I_dss
2 mA
@ 3dB compression
150° C
-60° C - 150° C
245 mW
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
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BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2012 Rev. A
September 2012