BCP020T-70 Datasheet, PDF (1/6 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25μm x 200μm gate)

BCP020T-70
HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 200µm gate)
The BeRex BCP060T-70 is a GaAs Power pHEMT in an industry standard, 70 mil. ceramic, low parasitic, surface-
mountable package. It’s 0.25µm by 200µm recessed gate architecture provides low noise, high gain and excellent
PAE over a broad frequency range of 1000 MHz to 26 GHz.
PRODUCT FEATURES
 70 mil. surface-mountable ceramic package
 0.8dB Noise Figure @12 GHz (typical)
 10.5 dB Associated Gain @12 GHz (typical)
 21.5 dBm P1dB @12 GHz (typical)
 13 dB Power Gain @12 GHz (typical)
 RoHS-compliant/lead-free
APPLICATIONS
 Commercial
 Military / Hi-Rel.
 Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T_a = 25° C
SYMBOLS
P_1dB
G_1dB
PAE
NF
PARAMETER/TEST CONDITIONS
Output Power @ P_1dB (V_ds = 6V, I_ds = 50% I_dss)
Gain @ P_1dB (V_ds = 6V, I_ds = 50% I_dss)
PAE @ P_1dB (V_ds = 6V, I_ds = 50% I_dss)
Noise Figure (V_ds=2V, I_ds=15mA)
TEST
FREQUENCY
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
G_a
Associated Gain (V_ds=2V, I_ds=15mA)
12 GHz
I_dss
Saturated Drain Current (V_gs = 0V, V_ds = 2.0V)
G_m
Transconductance (V_ds = 3V, Vgs = 50% I_dss)
V_p
Pinch-off Voltage (I_ds = 0.2 mA, V_ds = 2V)
BV_gd
Drain Breakdown Voltage (I_g = 0.2 mA, source open)
BV_gs
Source Breakdown Voltage (I_g = 0.2 mA, drain open)
R_th
Thermal Resistance
MIN.
20.0
21.0
12.0
8.5
40
-2.5
TYPICAL
21.5
22.5
13.0
9.5
65
60
0.8
10.5
60.0
80.0
-1.1
-15
-13
460
Max UNIT
dBm
dB
%
dB
dB
80
mA
mS
-0.5
V
V
V
° C/W
www.berex.com
BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2012 Rev. A
September 2012