BCP120T_15 Datasheet, PDF (1/5 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP120T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
The BeRex BCP120T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 1200 micron gate width
making the product ideally suited for amplifier applications where high-gain and medium power from DC to 26
GHz. The product may be used in either wideband or narrow-band applications. The BCP120T is produced using
state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 32 dBm Typical Output Power
• 11 dB Typical Gain @ 12 GHz
• 60% PAE Typical @12 GHz
• 0.25 X 1200 µm Recessed Gate
APPLICATIONS
• Commercial
• Military / Hi-Rel.
• Test & Measurement
DC CHARACTERISTICS Ta = 25° C
SYMBOL
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETER/TEST CONDITIONS
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
Transconductance (Vds = 2V, Vgs = 50% Idss)
Pinch-off Voltage (Ids = 1.2 mA, Vds = 2V)
Drain Breakdown Voltage (Igd = 0.8 mA, source open)
Source Breakdown Voltage (Ig = 0.8 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
MIN.
240
-2.5
TYPICAL
360
480
-1.1
-15
-13
41
MAX.
480
-0.5
-12
UNIT
mA
mS
V
V
V
°C/W
ELECTRICAL CHARACTERISTICS (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
31.0
10.0
TYPICAL
32.0
32.0
11.0
8.0
60
55
MAX.
UNIT
dBm
dB
%
www.berex.com
BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7
January 2015