BCL016B Datasheet, PDF (1/5 Pages) BeRex Corporation – SUPER LOW NOISE PHEMT CHIP

BCL016B
SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm)
The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 micron gate
width making the product ideally suited for applications requiring very low noise and high associated gain, in
frequencies of up to 40 GHz. The BCL016B offers high insertion gain and a low noise figure for broadband
applications. The BCL016B is produced using state of the art metallization with SI₃N₄ passivation and is screened to
assure reliability
PRODUCT FEATURES
 Low 0.4dB typical noise figure @12 GHz
 High 13.5dB Typical associated Gain @12 GHz
 High P_in of up to 20dBm
 0.15 X 160 Micron Recessed Gate
APPLICATIONS
 Commercial
 Military / Hi-Rel.
 Test & Measurement
ELECTRICAL CHARACTERISTICS (T_a = 25° C)
SYMBOL
PARAMETER/TEST CONDITIONS
NF
Noise Figure (Vds = 2V, Id = 10mA)
G_A
P1dB
Associated Gain (Vds = 2V, Id = 10mA)
Output Power @ p1dB (Vds = 2V, Id = 10mA)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
I_DSS
Saturated Drain Current (Vgs = 0V, Vds = 2V)
G_M
Transconductance (Vds = 2V, Vgs = -0.3V)
V_P
Pinch-off Voltage (Vds = 2V, Id = 200µA)
BV_GD Gate-Drain Breakdown Voltage, (Ig = -200 µA, source open)
BV_GS
Gate-Source Breakdown Voltage, (Ig = -200 µA, drain open)
R_TH
Thermal Resistance, junction to back side
(Au-Sn Eutectic Attach)
MIN.
12.5
10.5
13
TYPICAL
0.4
0.6
13.5
11.5
14.5
50
120
-0.7
9
6
270
Max. UNIT
dB
dB
dBm
mA
mS
V
V
V
° C/W
www.berex.com BeRex, Inc. 1735 North 1^st Street #302 San Jose, CA 95112 T: [phone]; F: [phone] Nov. 2012
Specifications are subject to change without notice. ©BeRex 2012
Rev. 1.7