AZV831 Datasheet, PDF (8/24 Pages) BCD Semiconductor Manufacturing Limited – Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier

Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
5.0V DC Electrical Characteristics
V_CC=5.0V, V_EE=0, V_CM=V_CC/2, T_A=25°C, unless otherwise noted.
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Offset Voltage
V_OS
0.5 2.5 mV
Input Bias Current
I_B
1.0 5.0 pA
Input Offset Current
I_OS
Input Common-mode Voltage Range V_CM
2.0 pA
-0.3
5.3 V
Common-mode Rejection Ratio
Large Signal Voltage Gain
Input Offset Voltage Drift
Output Voltage Swing from Rail
Sink
Output Current
Source
Closed-loop Output Impedance
V_CM=-0.3V to 3.9V
CMRR
V_CM=-0.3V to 5.3V
70 85
65 90
R_L=1kΩ connect to V_CC/2,
G_V
V_O=0.2V to 4.8V
R_L=10kΩ connect to V_CC/2,
V_O=0.05V to 4.95V
80 92
85 98
ΔV_OS/ΔT
2.0
V_IN=0.5V, R_L=1kΩ connect to
V_OL/V_OH
V_CC/2
V_IN=0.5V, R_L=10kΩ connect to
V_CC/2
25
4
I_SINK V_OUT=V_CC
100 150
I_SOURCE V_OUT=0V
110 185
f=1kHz, G=1 (note 2)
9
dB
dB
μV/°C
50
mV
15
mA
Ω
Power Supply Rejection Ratio
Supply Current
PSRR V_CC=1.6V to 5.0V, V_CM=0.5V 70 80
dB
I_CC V_CM<V_CC-1V, I_OUT=0
70 90 μA
5V AC Electrical Characteristics
V_CC=5.0V, V_EE=0, V_CM=V_CC/2, T_A=25°C, unless otherwise noted.
Parameter
Symbol
Conditions
Gain Bandwidth Product
GBP
Slew Rate
SR
Phase Margin
φ_M
THD+N
THD+N
Voltage Noise Density
e_n
Note 2: G is Closed-loop Voltage Gain.
R_L=100kΩ
G=1, 2V Step,
C_L=100pF, R_L=10kΩ
R_L=100kΩ
f=1kHz, G=1, V_IN=1V_PP
R_L=10kΩ,C_L=100pF
f=1kHz
Min Typ Max Unit
1.0
MHz
0.45
V/μs
67
Degrees
-70
dB
27
nV/ Hz
Nov. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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