AZV831 Datasheet, PDF (7/24 Pages) BCD Semiconductor Manufacturing Limited – Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier

Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
3.0V DC Electrical Characteristics
V_CC=3.0V, V_EE=0, V_CM=V_CC/2, T_A=25°C, unless otherwise noted.
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Offset Voltage
V_OS
0.5 2.5 mV
Input Bias Current
I_B
1.0 5.0 pA
Input Offset Current
I_OS
2.0 pA
Input Common-mode Voltage Range V_CM
-0.3
3.3 V
Common-mode Rejection Ratio
Large Signal Voltage Gain
Input Offset Voltage Drift
Output Voltage Swing from Rail
Sink
Output Current
Source
V_CM=-0.3V to 1.9V
CMRR
V_CM=-0.3V to 3.3V
R_L=1kΩ connect to V_CC/2，
G_V
V_O=0.2V to 2.8V
R_L=10kΩ connect to V_CC/2,
V_O=0.1V to 2.9V
ΔV_OS/ΔT
V_OL/V_OH
V_IN=0.5V, R_L=1kΩ connect
to V_CC/2
V_IN=0.5V, R_L=10kΩ connect
to V_CC/2
I_SINK V_OUT=V_CC
I_SOURCE V_OUT=0V
62 80
dB
58 75
90 110
dB
95 115
2.0
μV/ °C
20 50
mV
3 15
50 60
mA
50 65
Closed-loop Output Impedance
Z_OUT f=10kHz, G=1 (Note 2)
9
Ω
Power Supply Rejection Ratio
PSRR V_CC=1.6V to 5.0V, V_CM=0.5V 70 80
dB
Supply Current
I_CC V_CM<V_CC-1V, I_OUT=0
70 90 μA
3.0V AC Electrical Characteristics
V_CC=3.0V, V_EE=0, V_CM=V_CC/2, T_A=25°C, unless otherwise noted.
Parameter
Symbol
Conditions
Gain Bandwidth Product
GBP
Slew Rate
SR
Phase Margin
φ_M
Total Harmonic Distortion+Noise THD+N
Voltage Noise Density
e_n
Note 2: G is Closed-Loop Voltage Gain.
R_L=100kΩ
G=1, 2V Step,
C_L=100pF, R_L=10kΩ
R_L=100kΩ
f=1kHz, G=1, V_IN=1V_pp
R_L=10kΩ, C_L=100pF
f=1kHz
Min Typ Max Unit
1.0
MHz
0.40
V/μs
67
Degrees
-70
dB
27
nV/ Hz
Nov. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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