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AP2132_10 Datasheet, PDF (6/13 Pages) BCD Semiconductor Manufacturing Limited – 2A CMOS LDO Regulator
Data Sheet
2A CMOS LDO Regulator
AP2132
Electrical Characteristics
VIN=VOUT+0.5V, VCTRL=VEN=5V, TA=25oC, CIN=COUT=10µF, CCTRL=1µF, IOUT=10mA, Bold typeface applies
-40 oC≤TA≤85 oC unless otherwise specified.
Parameter
Output Voltage
Input Voltage
Max. Output Current
Load Regulation
Line Regulation
Dropout Voltage
Supply Current
VCTRL Current
Power Supply
Rejection Ratio
Output Voltage
.
Temperature
Coefficient
Reference Voltage
Enable
Voltage
“High”
Enable “Low” Voltage
Thermal Shutdown
Thermal Shutdown
Hysteresis
VOUT Power
Good Voltage
VPG Hysteresis
Adjust Pin Threshold
Thermal Resistance
(Junction to Case)
Symbol
VOUT
VIN
IOUT(max)
VRLOAD
VRLINE
VDROP
ISUPPLY
ICTRLH
ICTRLL
PSRR
△VOUT
VOUT×△T
VREF
OTSD
VTHPG
θJC
Conditions
VIN = VOUT+0.5V,
IOUT =10mA
VIN – VOUT = 1V,
VOUT =98%×VOUT
VIN=VOUT +0.5V, 10mA≤IOUT≤2A
VOUT + 0.5V≤VIN≤5V,
IOUT = 10mA
IOUT =500mA
IOUT =1A
IOUT =2A
VIN=VOUT+0.5V, IOUT=0mA
VIN = VOUT+0.5V, VCTRL=VEN=5V
VIN=VOUT+0.5V,
VEN=0V
Ripple 0.5Vp-p,
VIN=VOUT+1V
VCTRL=5V,
f=100Hz
f=1kHz
IOUT=10mA, -40 oC≤TA≤85oC
Adjust Short to VOUT
Enable Input Voltage “High”
Enable Input Voltage “Low”
PSOP-8
Min
VOUT ×
98%
1.4
2
0.588
1.5
Typ Max Unit
VOUT ×
102%
V
5.5
V
A
10
mV
2
80
150
300
300
250
0.1
60
60
±100
0.6
165
20
120
200
450
500
1
0.612
0.4
mV
mV
mV
mV
µA
µA
µA
dB
dB
ppm/
oC
V
V
V
oC
oC
92
%
7
%
200
mV
40
ºC/W
Oct. 2010 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
6