AT1040 Datasheet, PDF (4/7 Pages) BCD Semiconductor Manufacturing Limited – General Purpose ITVS, 4 I/Os, CI/O-VSS<1.1pF, VCC

Preliminary Datasheet
General Purpose ITVS, 4 I/Os, C_I/O-VSS<1.1pF, V_CC
AT1040
Electrical Characteristics
T_A=25ºC, unless otherwise specified.
Parameter
Working Voltage, VCC to VSS
Channel Leakage Current
Reverse Breakdown Voltage, VCC to VSS
Holding Voltage
Clamping Voltage (Lightning) VCC to VSS
(IEC61000-4-5)
I/O to VSS
Trigger Voltage
VCC to VSS
I/O to VSS
ESD Clamping Voltage
VCC to VSS
I/O to VSS
Differential
Clamping VCC to VSS
Resistance
I/O to VSS
Channel Input Capacitance I/O to VSS
Symbol
I_R
V_BR
V_H
Conditions
Pin 5 to Pin 2
V_CC=5V,V_SS=0V
I_BV=1mA
At 12A
At 6A
V_TRIG
At 10A, TLP, 100ns
R_DIFF-F
C_I/O
V_I/O=2.5V,V_CC=5V,
V_SS=0V,f=1MHz
Min Typ Max Unit
-0.7
5.0
V
1
μA
5.5
V
5.25
V
9.5
V
9.6
V
8
V
9
V
7
V
9
V
0.1
Ω
0.25
Ω
0.65 1.1 pF
Typical Performance Characteristics
T_A=25°C, unless otherwise specified.
8.5
8.0
7.5
7.0
6.5
BV
V
6.0
TRIG
V
H
5.5
5.0
-60 -40 -20
0 20 40 60 80 100 120 140
Temperature (^oC)
Figure 4. BV, Trigger Voltage, Holding Voltage
vs. Temperature
10
VCC to VSS
8
I/O to VSS
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
Voltage from VCC to VSS (V)
Voltage from I/O to VSS (V)
Figure 5. Current vs. Voltage
Aug. 2012 Rev. 2.0
BCD Semiconductor Manufacturing Limited
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