APT17_11 Datasheet, PDF (4/10 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE NPN TRANSISTOR

HIGH VOLTAGE NPN TRANSISTOR
Typical Performance Characteristics
Data Sheet
APT17
35
30
T_J=125⁰C
25
T =25⁰C
J
20
15
10
5
10E-4
1E-3
0.01
Collector Current I_C(A)
V_CE=20V
V_CE=20V
0.1
Figure 3. DC Current Gain
100
T_J=150⁰C
10
T_J=125⁰C
1
0.1 ^TJ^=750C
0.01
T_J=25⁰C
1E-3
20
40
60
80
100
120
Percent of Collector-Emitter Reverse voltage(%)
Figure 4. Typical Reverse Characteristics
0.1
0.01
0.001
Package: SOT-23
1
0.1
0.01
0.001
Package: TO-92
0.00011
0.0001
10
100
1000
10
Collector-Emitter Clamp Voltage V_CE(V)
100
1000
Collector-Emitter Clamp Voltage V_CE(V)
Figure 5. Safe Operating Areas
Figure 6. Safe Operating Areas
Aug. 2011 Rev 1. 4
BCD Semiconductor Manufacturing Limited
4