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| APT17_11 Datasheet, PDF (3/10 Pages) BCD Semiconductor Manufacturing Limited – HIGH VOLTAGE NPN TRANSISTOR | |||
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HIGH VOLTAGE NPN TRANSISTOR
Thermal Characteristics
Parameter
Thermal Resistance (Junction-to-Ambient)
SOT-23
TO-92
Symbol
θJA
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Symbol
Collector Cut-off Current
(VBE=-1.5V)
ICEV
Collector-Emitter Sustaining
Voltage (IB=0)
VCEO (sus)
DC Current Gain
hFE
Conditions
VCE=700V
IC=300μA
IC=100μA, VCE=20V
IC=500μA, VCE=20V
IC=10mA, VCE=20V
Value
625
250
Data Sheet
APT17
Unit
oC/W
Min Typ Max Unit
10
μA
480
V
21
36.5
24.5
35.5
20
45.5
Aug. 2011 Rev 1. 4
BCD Semiconductor Manufacturing Limited
3
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