AT-64000 Datasheet, PDF (3/4 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip

Typical Performance Curves at Tc = +25°C
Figure 1. Power Output @ 1 dB Gain Compression vs. Frequency and Collec- Figure 2. 1 dB Compressed Gain vs. Frequency and Collector Current. VCE
tor Current. VCE = 16 V.
= 16 V.
Figure 3. Output Power and Efficiency vs. Input Power. VCE = 16 V, IC = 110 Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum
mA, f = 4.0 GHz.
Stable Gain vs. Frequency. VCE = 16 V, IC = 110 mA.
Typical Scattering Parameters at Tc = +25°C
V_CE = 16 V, I_C = 110 mA, Z_O = 50 Ohm, Common Emitter
S11
S21
S12
S22
Freq. GHz Mag.
Ang.
dB
Mag.
Ang.
dB
Mag. Ang.
Mag.
Ang.
0.1
.54
-124
28.2
25.71 135
-33.3
.022
42
.72
-51
0.5
.80
-178
17.6
7.57
78
-29.5
.034
18
.33
-119
1.0
.80
162
11.9
3.92
47
-28.6
.037
10
.33
-142
1.5
.80
147
8.6
2.70
21
-27.9
.040
12
.40
-156
2.0
.78
133
6.3
2.07
-4
-27.6
.042
1
.48
-169
2.5
.77
127
5.1
1.80
-24
-25.5
.053
-5
.58
-178
3.0
.73
116
3.8
1.56
-51
-25.0
.056
-20
.67
170
3.5
.66
106
2.9
1.40
-79
-25.8
.051
-28
.78
156
4.0
.60
99
2.2
1.28
-109
-27.2
.044
-49
.86
142
4.5
.55
98
1.4
1.18
-141
-31.2
.028
-70
.93
127
5.0
.54
99
0.6
1.07
-175
-40.9
.009
-144
.93
112
A model for this device is available in the DEVICE MODELS section.