AT-64000 Datasheet, PDF (2/4 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip

Table 1. Absolute Maximum Ratings at Tc = +25°C
Symbol
Parameter
Unit
Max Rating
V_EBO
Emitter-Base Voltage
V
2.2
V_CBO
Collector-Base Voltage
V
40
V_CEO
Collector-Emitter Voltage
V
20
I_C
Collector Current
P_T
Power Dissipation^[3]
T_j
Junction Temperature
mA
200
W
3
0_C
200
T_stg
Storage Temperature
0_C
-65 to 200
q_jc
Thermal Resistance
0_C/W
40
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. Maximum ratings are tested in 230 mil BeO packages.
3. T—CASE = 25 °C. Derate at 25 mW/°C for Tc > 80°C
Table 2. Electrical Specifications ^[1,2] at Tc = +25°C
Symbol
Parameter and Test Condition
|S_21E|²
Insertion Power Gain;
Vce = 16V, Ic = 110 mA
P1dB
Power Output @1dB Gain Compression
Vce = 16V, Ic = 110 mA
G1dB
1 dB Compressed Gain
Vce = 16V, Ic = 110 mA
h_T
Total Efficiency^[3] at 1 dB Gain Compression
Vce = 16V, Ic = 110 mA
h_FE
Forward Current Transfer Ratio; Vce = 8V, Ic = 110 mA
I_CBO
Collector Cutoff Current; V_CB = 16 V
I_EBO
Emitter Cutoff Current; V_EB = 1V
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. RF performance is measured in 230 mil BeO packages.
3. ηT = (RF Output Power)/(RF Input Power + VCE x IC)
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units Min. Typ. Max.
dB
6.5
2.0
dBm 25.5 27.5
26.5
dB
7.0
12.5
9.5
%
35.0
-
20
50
200
uA
100
uA
5.0