 English |
|
|
|
|
|
|
|
| AT-42085 Datasheet, PDF (2/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Medium Power Up to 6 GHz Medium Power | |||
| |||
| ◁ |
AT-42085 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute
Maximum[1]
VEBO
Emitter-Base Voltage
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
IC
Collector Current
PT
Power Dissipation [2,3]
Tj
Junction Temperature
TSTG
Storage Temperature
V
1.5
V 20
V
12
mA
80
mW
500
°C
150
°C
-65 to 150
Thermal Resistance [2,4]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. Tcase= 25°C.
3. Derate at 7.7 mW/°C for Tc> 85°C.
4. See MEASUREMENTS section âThermal
Resistanceâ for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
|S21E| 2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 1.0 GHz
dB 15.5 17.0
f = 2.0 GHz 11.0
f = 4.0 GHz
5.0
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dBm 20.5
f= 4.0 GHz 20.0
f = 2.0 GHz
dB 14.0
f = 4.0 GHz
9.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB 2.0
f = 4.0 GHz
3.5
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB 13.5
f = 4.0 GHz
9.5
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
ICBO
Collector Cutoff Current; VCB = 8 V
IEBO
Emitter Cutoff Current; VEB = 1 V
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
GHz
8.0
â 30 150 270
µA 0.2
µA 2.0
pF 0.32
Note:
1. For this test, the emitter is grounded.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese