AT-42085 Datasheet, PDF (1/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Medium Power Up to 6 GHz Medium Power

AT-42085
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’s AT-42085 is a general purpose NPN bipolar
transistor that offers excellent high frequency
performance. The AT-42085 is housed in a low cost .085"
diameter plastic package.The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 20 emitter finger interdigitated geometry
yields a medium sized transistor with impedances that
are easy to match for low noise and medium power
applications. Applications include use in wireless systems
as an LNA, gain stage, buffer, oscillator, and mixer. An
optimum noise match near 50Ω up to 1 GHz, makes this
device easy to use as a low noise amplifier.
• High Output Power:
20.5 dBm Typical P1 dB at 2.0 GHz
• High Gain at 1 dB Compression:
14.0 dB Typical G1 dB at 2.0 GHz
• Low Noise Figure:
2.0 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Low Cost Plastic Package
• Lead-free Option Available
The AT-42085 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ion-implantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
85 Plastic Package