AT-42000 Datasheet, PDF (2/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Medium Power Up to 6 GHz Medium Power

AT-42000 Absolute Maximum Ratings
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation ^[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum ^[1]
1.5
20
12
80
600
200
-65 to 200
Part Number Ordering Information
Part Number
AT-42000-GP4
Devices Per Tray
100
Thermal Resistanc e^[2,4] :
θ _jc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T_{Mounting Surface} = 25°C.
3. Derate at 14.3 mW°/C for
T_{Mounting Surface} > 158°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θ_jc
than do alternate methods. See
MEASUREMENTS section
ÒThermal ResistanceÓ for more
information.
Electrical Specifications, T_A = 25 °C
Symbol
Parameters and Test Conditions
|S_21E|² Insertion Power Gain; V_CE = 8 V, I_C = 35 mA
[1]
Units Min.
f = 2.0 GHz dB
f = 4.0 GHz
P_{1 dB}
G_{1 dB}
Power Output @ 1 dB Gain Compression
V_CE = 8 V, I_C = 35 mA
1 dB Compressed Gain; V_CE = 8 V, I_C = 35 mA
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dBm
dB
NF_O Optimum Noise Figure: V_CE = 8 V, I_C = 10 mA
G_A
Gain @ NFO; V_CE = 8 V, IC = 10 mA
f = 2.0 GHz dB
f = 4.0 GHz
f = 2.0 GHz dB
f = 4.0 GHz
f_T
Gain Bandwidth Product: V_CE = 8 V, I_C = 35 mA
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 35 mA
I_CBO Collector Cutoff Current; V _CB = 8 V
I_EBO Emitter Cutoff Current; V _EB = 1 V
C_CB
Collector Base Capacitance^[2]: V_CB = 8 V, f = 1 MHz
GHz
Ñ
30
mA
mA
pF
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
Typ. Max.
11.5
5.5
21.0
20.5
15.0
10.0
1.9
3.0
14.0
10.5
9.0
150 270
0.2
2.0
0.23