AT-42000 Datasheet, PDF (1/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Medium Power Up to 6 GHz Medium Power

AT-42000
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip
Data Sheet
Description
Avago’s AT-42000 is a general purpose NPN bipolar transis-
tor chip that offers excellent high frequency performance.
The 4 micron emitter-to-emitter pitch enables this transis-
tor to be used in many different functions. The 20 emit-
ter finger interdigitated geometry yields a medium sized
transistor with impedances that are easy to match for low
noise and medium power applications.
This device is designed for use in low noise, wideband am-
plifier, mixer and oscillator applications in the VHF, UHF,
and microwave frequencies. An optimum noise match
near 50W up to 1 GHz , makes this device easy to use as a
low noise amplifier.
The AT-42000 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ionimplantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
The recommended assembly procedure is gold-eutectic
die attach at 400oC and either wedge or ball bonding us-
ing 0.7 mil gold wire. See APPLICATIONS section, “Chip
Use”.
Features
• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB
Compression:
15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure: 1.9 dB
Typical NFO at 2.0 GHz
• High Gain-Bandwidth
Product: 9.0 GHz Typical fT
Chip Outline
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.