AMMC-5620 Datasheet, PDF (2/8 Pages) AVAGO TECHNOLOGIES LIMITED – 6 - 20 GHz High Gain Amplifier

AMMC-5620 DC Specifications/Physical Properties ^[1]
Symbol Parameters and Test Conditions
Units
Min.
Typical Max.
V_DD
Recommended Drain Supply Current
V
5
I_DD
Total Drain Supply Current ( V_DD = 5V)
mA
70
95
130
I_DD
Total Drain Supply Current ( V_DD = 7V)
mA
105
q_ch-b
Thermal Resistance ^[3]
°C/W
33
(Backside temperature (T_b) = 25 °C
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (qch-b) = 47°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
AMMC-5620 RF Specifications ^[3]
Tb = 25°C, V_DD=5V, I_DD=95 mA, Z_o=50 Ω
Symbol Parameters and Test Conditions
S21 ² Small-signal Gain
Gain Slope
RL_in
RL_out
S12 ²
Positive Small-signal Gain Slope
Input Return Loss
Output Return Loss
Reverse Isolation
P_-1dB
P_sat
OIP3
Output Power at 1 dB Gain Compression @ 20 GHz
Saturated Output Power (3dB Gain Compression) @ 20 GHz
Output 3rd Order Intercept Point @ 20 GHz
NF
Noise Figure @ 20 GHz
Notes:
3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
Units
dB
dB/GHz
dB
dB
dB
dBm
dBm
dBm
dB
Min.
16
10
10
12.5
14.5
Typical Max.
19
22
+0.21
13
14
- 55
15
17
23.5
4.2
5.0