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| AMMC-5026_08 Datasheet, PDF (2/8 Pages) AVAGO TECHNOLOGIES LIMITED – 2-35 GHz GaAs MMIC Traveling Wave Amplifier | |||
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AMMC-5026 DC Specifications/Physical Properties[1]
Symbol Parameters and Test Conditions
Units
Min.
Typ.
Max.
Idss
Saturated Drain Current
(Vdd=7 V, Vg1=0 V, Vg2=open circuit)
mA
250
350
450
Vp1
First Gate Pinch-off Voltage
(Vdd=7 V, Idd=0.1 Idss, Vg2=open circuit)
V
-1.2
Vg2
Second Gate Self-bias Voltage
(Vdd=7 V, Idd=150 mA, Vg2=open circuit)
V
3.5
Idsoff
First Gate Pinch-off Current
mA
75
(Vg1)
(Vdd=7 V, Vg1=3.5 V, Vg2=open circuit)
θch-b
Thermal Resistance[2]
(Backside temperature, Tb = 25°C)
°C/W
28
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 38°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
RF Specifications[3,4]
(Vdd = 7V, Idd (Q) = 150 mA, Zin = Z0 = 50Ω)
Symbol Parameters and Test Conditions
Units
Min.
|S21|2
Small-signal Gain
â|S21|2 Small-signal Gain Flatness
RLin
Input Return Loss
RLout
Output Return Loss
|S12|2
Isolation
P-1dB
Output Power @ 1 dB Gain Compression f = 10 GHz
Psat
Saturated Output Power
f = 10 GHz
OIP3
Output 3rd Order Intercept Point,
RFin1 = RFin2 = - 20 dBm, f = 10 GHz, âf = 2 MHz
NF
Noise Figure
f = 10 GHz
f = 20 GHz
dB
8.5
dB
dB
13
dB
12
dB
23
dBm
22
dBm
dBm
dB
dB
H2
Second Harmonic (Pin = 12 dBm at 10 GHz)
dBc
H3
Third Harmonic (Pin = 12 dBm at 10 GHz)
dBc
Notes:
1. Data measured in wafer form, Tchuck = 25°C.
2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.
Typ.
Max.
10.5
12.5
±0.75 ±1.5
17
15
26
24
26
31
3.6
4.3
-20
-17.5
-30
-28
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