AMMC-5026_08 Datasheet, PDF (1/8 Pages) AVAGO TECHNOLOGIES LIMITED – 2-35 GHz GaAs MMIC Traveling Wave Amplifier

AMMC-5026
2–35 GHz GaAs MMIC Traveling Wave Amplifier
Data Sheet
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
3050 x 840 µm (119 x 33 mils)
±10 µm (±0.4 mils)
100 ± 10 µm (4 ± 0.4 mils)
75 x 75 µm (2.9 ± 0.4 mils)
Description
The AMMC-5026 is a broadband PHEMT GaAs MMIC
Traveling Wave Amplifier (TWA) designed for medium
output power and high gain over the full 2 GHz to 35 GHz
frequency range. The design employs a 6-section cascode
connected FET structure to provide flat gain and medium
power as well as uniform group delay. For improved reli-
ability and moisture protection, the die is passivated at
the active areas.
Applications
• Broadband gain block
• Broadband driver amplifier
• 10 Gb/s Fiber Optics
Features
• Frequency range: 2 – 35 GHz
• Gain: 10.5 dB
• Gain flatness: ±0.8 dB
• Return loss:
Input 17 dB, Output: 15 dB
• Output power (P-1dB):
24 dBm at 10 GHz
23 dBm at 20 GHz
22 dBm at 26 GHz
• Noise figure (6–19 GHz): ≤ 4 dB
Absolute Maximum Ratings ^[1]
Symbol Parameters/Conditions
Units
Min.
Max.
V_dd
Positive Drain Voltage
V
10
I_dd
Total Drain Current
mA
450
V_g1
First Gate Voltage
V
-5
I_g1
First Gate Current
mA
-9
+5
V_g2
Second Gate Voltage
V
-3
+3.5
I_g2
Second Gate Current
mA
-10
P_in
CW Input Power
dBm
23
T_ch
Channel Temperature
°C
+150
T_b
Operating Backside Temperature
°C
-55
T_stg
Storage Temperature
°C
-65
+165
T_max
Max. Assembly Temp (60 sec max) °C
+300
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this
device.