ABA-52563 Datasheet, PDF (2/8 Pages) Agilent(Hewlett-Packard) – 3.5 GHz Broadband Silicon RFIC Amplifier

ABA-52563 Absolute Maximum Ratings^[1]
Symbol Parameter
V_cc
Device Voltage, RF output to ground (T = 25°C)
P_in
CW RF Input Power (Vcc = 5V)
P_diss
Total Power Dissipation^[3]
T_j
Junction Temperature
T_STG
Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
+7
+20
0.4
150
-65 to 150
Thermal Resistance^[2] (Vcc = 5V):
θ_jc = 106°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 3.5 mW/°C for Tb > 109°C.
Electrical Specifications
T_c = +25°C, Z_o = 50 Ω, P_in = -30 dBm, V_cc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp^[1]
Power Gain (|S₂₁|²)
dB
20
21.5  0.2
∆Gp
Power Gain Flatness, f = 0.1 ~ 2.5 GHz
dB

f = 0.1 ~ 3.5 GHz
0.5
2.1
NF^[1]
Noise Figure
dB
3.3
4
0.12
P1dB^[1]
Output Power at 1dB Gain Compression
dBm  
9.8  
0.15
OIP3^[1]
Output Third Order Intercept Point
dBm  
19.9  
0.18
VSWR_in[1]
VSWR_out[1]
Icc^[1]
Input VSWR    
Output VSWR

Device Current
mA  
1.2    
1.4    
35  43
0.5
td^[1]
Group Delay
ps  
150    
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
C_block
RF Output
RF Input
C_block
Figure 1. ABA-52563 Production Test Circuit.
RFC
Vcc
C_bypass
2