RFP50N05L_04 Datasheet, PDF (3/6 Pages) Austin Semiconductor – 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

Typical Performance Curves
RFP50N05L
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
50
40
30
20
10
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
I_D MAX CONTINUOUS
10
OPERATION IN THIS
AREA LIMITED
BY r_DS(ON)
1
T_C = 25^oC
T_J = MAX RATED
DC OPERATION
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
1000
IF R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
IF R = 0
T_AV = (L/R) IN [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
I_DM
100
STARTING T_J = 25^oC
STARTING T_J = 150^oC
10
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SAFE
OPERATING AREA
140
120 ^{VGS = 10V}
100
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V_GS = 5V
T_C - 25^oC
V_GS = 4V
60
40
V_GS = 3V
20
0
0
V_GS = 2V
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
140
PULSE DURATION = 80µs
120
DUTY CYCLE = 0.5% MAX.
T_C - 25^oC
100
V_DS = 15V
80
-55^oC
25^oC
60
150^oC
40
20
0
0
1.5
3.0
4.5
6.0
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
©2004 Fairchild Semiconductor Corporation
RFP50N05L Rev. C