RFP50N05L_04 Datasheet, PDF (1/6 Pages) Austin Semiconductor – 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

Data Sheet
August 2004
RFP50N05L
50A, 50V, 0.022 Ohm, Logic Level,
N-Channel Power MOSFETs
These are logic-level N-channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic-level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V - 5V range, thereby facilitating true on-off power
control directly from integrated circuit supply voltages.
Formerly developmental type TA09872.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP50N05L
TO-220AB
F50N05L
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 50A, 50V
• r_DS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
©2004 Fairchild Semiconductor Corporation
RFP50N05L Rev. C