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SUF2001 Datasheet, PDF (4/13 Pages) AUK corp – Dual N and P-channel Trench MOSFET
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SUF2001
P-CH Electrical Characteristics
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance ⑧
Input capacitance
Output capacitance
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
ID=250µA, VGS=0
ID=250µA, VDS=VGS
VDS=-30V, VGS=0V
VDS=0V, VGS=±20V
VGS=-10V, ID=-2.7A
VGS=-5.0V, ID=-2.7A
VDS=-5V, ID=-5.3A
VGS=0V, VDD=-10V,
f=1MHz
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-5.3A
RG=10Ω
⑦⑧
VDD=-15V, VGS=-5V
ID=-5.3A
⑦⑧
Min.
-30
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
66
77
11
390
97
37
1.2
1.1
2.5
1.1
4.7
1.4
1.7
(Ta=25°C)
Max. Unit
-
V
-3.0
V
1
µA
±100 nA
72
mΩ
83
mΩ
-
S
590
150 pF
60
-
-
ns
-
-
7.0
2.1
nC
2.5
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Source current
Source current(Plused)
Forward voltage
IS
Integral reverse diode
⑤
ISM
in the MOSFET
⑧
VSD
VGS=0V, IS=-1.5A
Reverse recovery time
Reverse recovery charge
trr
Is=-1.5A
Qrr
diS/dt=100A/us
Note ;
⑤ Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
⑥ L=2.0mH, IAS=-5.0A, VDD=-15V, RG=25Ω
⑦ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
⑧ Essentially independent of operating temperature
Min
-
-
-
-
-
Typ
-
-
-
90
0.5
(Ta=25°C)
Max Unit
-1.5
A
-6.0
-1.2
V
-
ns
-
uC
KSD-T7F002-000
4
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