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SUF2001 Datasheet, PDF (3/13 Pages) AUK corp – Dual N and P-channel Trench MOSFET
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SUF2001
N-CH Electrical Characteristics
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance ④
Input capacitance
Output capacitance
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
ID=250µA, VGS=0
ID=250µA, VDS= VGS
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
VGS=10V, ID=2.9A
VGS=5.0V, ID=2.9A
VDS=5V, ID=5.8A
VGS=0V, VDD=10V,
f=1MHz
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V, ID=5.8A
RG=10Ω
③④
VDD=15V, VGS=5V
ID=5.8A
③④
Min.
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
24
28
12
370
60
36
1.2
1.1
2.5
1.1
4.2
0.9
1.4
(Ta=25°C)
Max. Unit
-
V
3.0
V
1
µA
±100 nA
30
mΩ
34
mΩ
-
S
560
90
pF
54
-
-
ns
-
-
6.3
1.4
nC
2.1
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Source current
Source current(Plused)
Forward voltage
IS
Integral reverse diode
①
ISM
in the MOSFET
④
VSD
VGS=0V, IS=1.5A
Reverse recovery time
Reverse recovery charge
trr
Is=1.5A
Qrr
diS/dt=100A/us
Note ;
① Repetitive Rating : Pulse width limited by maximum junction temperature
② L=3.4mH, IAS=5.8A, VDD=15V, RG=25Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
Min
-
-
-
-
-
Typ
-
-
-
90
0.5
(Ta=25°C)
Max Unit
1.5
A
6.0
1.2
V
-
ns
-
uC
KSD-T7F002-000
3
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