THN420Z Datasheet, PDF (3/5 Pages) AUK corp – SiGe NPN Transistor

THN420Z
□ Typical Characteristics ( T_A = 25 ℃, unless otherwise specified)
Power Dissipation
vs. Ambient Temperature
200
150
100
50
0
0
25 50 75 100 125 150
Ambient Temperature, T (oC)
A
Collector to Base Capacitance
vs. Collector to Base Voltage
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
Collector to Base Voltage, V (V)
CB
DC Current Gain
vs. Collector Current
200
180
V =2V
CE
160
140
120
100
80
60
40
20
0
1
10
100
Collector Current, I (mA)
C
Collector Current
vs. Base to Emitter Voltage
40
35
V =2V
CE
30
25
20
15
10
5
0
0.0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage, V (V)
BE
3