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THN420Z Datasheet, PDF (2/5 Pages) AUK corp – SiGe NPN Transistor
□ Electrical Characteristics (TA = 25 ℃)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Maximum Available Gain
Insertion Power Gain
Noise Figure
Collector – Base Capacitance
Symbol
ICBO
ICEO
IEBO
hFE
fT
MAG
|S21|2
NF
CCB
Test Conditions
VCB = 9 V, IE = 0 mA
VCE = 3 V, IB = 0 mA
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 20 mA
VCE = 2 V, IC = 15 mA
VCE = 3 V, IC = 30 mA
VCE = 2 V, IC = 15 mA, f = 1 GHz
VCE = 2 V, IC = 15 mA, f = 1.5 GHz
VCE = 2 V, IC = 15 mA, f = 1 GHz
VCE = 2 V, IC = 15 mA, f = 1.5 GHz
VCE = 3 V, IC = 5 mA, f = 1.8 GHz
VCB = 2 V, IE = 0 mA, f = 1 MHz
THN420Z
Min. Typ. Max.
-
-
1.0
-
-
1.0
-
-
0.5
50
-
260
15
17
-
18
20
-
20
22
-
18
20
-
17
19
-
14
16
-
-
1.1 1.3
- 0.24
-
Unit
㎂
㎂
㎂
GHz
GHz
dB
dB
dB
dB
dB
pF
□ hFE Classification
Marking
hFE Value
BE1
50 - 150
BE2
130 - 260
2