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THN4501U Datasheet, PDF (2/15 Pages) AUK corp – SiGe NPN Transistor
THN4501 Series
□ Electrical Characteristics ( TA = 25 ℃ )
Symbol
ICBO
ICEO
IEBO
hFE
fT
CCB
|S21|2
MAG
NFmin
rn
GA
Parameter
Test Condition
Collector Cut-off Current
VCB = 10 V, IE = 0 mA
VCE = 6 V, IB = 0 mA
Emitter Cut-off Current
VEB = 1 V, IC = 0 mA
DC Current Gain
VCE = 3 V, IC = 15 mA
Transition Frequency
VCE = 3 V, IC = 20 mA
Collector to Base Capacitance VCB = 10 V, f = 1 MHz
Insertion Power Gain
VCE = 3 V, IC = 30 mA, f = 2 GHz
VCE = 1 V, IC = 30 mA, f = 2 GHz
Maximum Available Gain
VCE = 3 V, IC = 30 mA, f = 2 GHz
VCE = 1 V, IC = 30 mA, f = 2 GHz
Minimum Noise Figure
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
Noise Resistance
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
Associated Gain
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
Min.
-
-
-
80
-
-
4.5
3.0
8.5
8.0
-
-
-
-
-
-
Value
Typ.
-
-
-
200
10.4
1.1
5.5
5.0
10.5
10.0
1.5
1.7
0.04
0.05
9.5
8.0
Max.
0.5
5.0
0.5
300
-
-
-
-
-
-
-
-
-
-
-
-
Unit
uA
uA
uA
GHz
pF
dB
dB
dB
Ω
dB
2