THN4501U Datasheet, PDF (1/15 Pages) AUK corp – SiGe NPN Transistor

Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4501 Series
SOT-523
SiGe NPN Transistor
Unit in mm
□ FEATURES
o Low Noise Figure
NF = 1.5dB at f = 2 GHz, V_CE = 3 V, I_C = 5 mA
NF = 1.7dB at f = 2 GHz, V_CE = 1 V, I_C = 3 mA
o High Gain
MAG = 12.5 dB at f = 2 GHz, V_CE = 3 V, I_C = 30 mA
MAG = 9.5 dB at f = 2 GHz, V_CE = 1 V, I_C = 7 mA
o High Transition Frequency
f_T = 11 GHz at f = 2 GHz, V_CE = 3 V, I_C = 50 mA
□ h_FE Classification
Marking AK1
AK2
h_FE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_T
T_STG
T_J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
□ Available Package
Product
Package
THN4501U SOT-323
THN4501Z SOT-343
THN4501E SOT-523
Unit : mm
Dimension
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
Ratings
Unit
15
V
6
V
2.5
V
100
mA
150
mW
-65 ~ 150
℃
150
℃
1