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THN4301U Datasheet, PDF (2/15 Pages) AUK corp – SiGe NPN Transistor
THN4301 Series
□ Electrical Characteristics ( TA = 25 ℃ )
Symbol
Parameter
Test Condition
Min.
ICBO
VCB = 10 V, IE = 0 mA
-
Collector Cut-off Current
ICEO
VCE = 6 V, IB = 0 mA
-
IEBO Emitter Cut-off Current
VEB = 1 V, IC = 0 mA
-
hFE DC Current Gain
VCE = 3 V, IC = 15 mA
80
fT
Transition Frequency
VCE = 3 V, IC = 20 mA
-
CCB Collector to Base Capacitance VCB = 10 V, f = 1 MHz
-
|S21|2 Insertion Power Gain
VCE = 3 V, IC = 15 mA, f = 2 GHz 6.0
VCE = 1 V, IC = 10 mA, f = 2 GHz 5.0
MAG Maximum Available Gain
VCE = 3 V, IC = 15 mA, f = 2 GHz 10.2
VCE = 1 V, IC = 10 mA, f = 2 GHz 9.5
NFmin Minimum Noise Figure
VCE = 3 V, IC = 5 mA, f = 2 GHz
-
VCE = 1 V, IC = 3 mA, f = 2 GHz
-
rn Noise Resistance
VCE = 3 V, IC = 5 mA, f = 2 GHz
-
VCE = 1 V, IC = 3 mA, f = 2 GHz
-
GA Associated Gain
VCE = 3 V, IC = 5 mA, f = 2 GHz
-
VCE = 1 V, IC = 3 mA, f = 2 GHz
-
Value
Typ.
-
-
-
200
14
0.63
8.0
7.0
12.2
11.5
1.5
1.7
0.04
0.05
9.5
8.0
Max.
0.5
5.0
0.5
300
-
-
-
-
-
-
-
-
-
-
-
-
Unit
uA
uA
uA
GHz
pF
dB
dB
dB
Ω
dB
2