THN4301U Datasheet, PDF (1/15 Pages) AUK corp – SiGe NPN Transistor

Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure
NF = 1.5dB at f = 2 GHz, V_CE = 3 V, I_C = 5 mA
NF = 1.7dB at f = 2 GHz, V_CE = 1 V, I_C = 3 mA
o High Gain
MAG = 12.3 dB at f = 2 GHz, V_CE = 3 V, I_C = 25 mA
MAG = 12.0 dB at f = 2 GHz, V_CE = 1 V, I_C = 5 mA
o High Transition Frequency
f_T = 15 GHz at f = 2 GHz, V_CE = 3 V, I_C = 25 mA
THN4301 Series
SOT-523
SiGe NPN Transistor
Unit in mm
□ h_FE Classification
Marking AH1
AH2
h_FE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
Parameter
V_CBO Collector to Base Breakdown Voltage
V_CEO
V_EBO
I_C
P_T
T_STG
T_J
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
□ Available Package
Product
Package
THN4301U SOT-323
THN4301Z SOT-343
THN4301E SOT-523
Unit : mm
Dimension
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
Ratings
Unit
15
V
6
V
2.5
V
65
mA
150
mW
-65 ~ 150
℃
150
℃
1