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AT28BV64B_09 Datasheet, PDF (6/16 Pages) ATMEL Corporation – 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
8. DC Characteristics
Symbol
ILI
ILO
ISB
ICC
VIL
VIH
VOL
VOH
Parameter
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Condition
Min
VIN = 0V to VCC + 1V
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC + 1V
f = 5 MHz; IOUT = 0 mA
2.0
IOL = 1.6 mA
IOH = -100 µA
2.0
Max
10
10
50
15
0.6
0.45
9. AC Read Characteristics
Symbol
tACC
tCE(1)
tOE(2)
tDF(3)(4)
tOH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or Address, Whichever Occurred First
10. AC Read Waveforms(1)(2)(3)(4)
AT28BV64B-20
Min
Max
200
200
0
80
0
55
0
Units
µA
µA
µA
mA
V
V
V
V
Units
ns
ns
ns
ns
ns
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
6 AT28BV64B
0299I–PEEPR–4/09