AT28BV64B_09 Datasheet, PDF (1/16 Pages) ATMEL Corporation – 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection

Features
• Single 2.7V to 3.6V Supply
• Hardware and Software Data Protection
• Low Power Dissipation
– 15 mA Active Current
– 20 µA CMOS Standby Current
• Fast Read Access Time – 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
• Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
• DATA Polling for End of Write Detection
• High-reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• JEDEC Approved Byte-wide Pinout
• Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Only
1. Description
The AT28BV64B is a high-performance electrically erasable programmable read only-
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20 µA.
The AT28BV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64 byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-
bility. A software data protection mechanism guards against inadvertent writes. The
device also includes an extra 64 bytes of EEPROM for device identification or
tracking.
64K (8K x 8)
Battery-Voltage
Parallel
EEPROM
with Page Write
and Software
Data Protection
AT28BV64B
0299I–PEEPR–4/09