AT30TSE758_14 Datasheet, PDF (49/60 Pages) ATMEL Corporation – Digital Temperature Sensor with Nonvolatile Registers

12.6 Nonvolatile Register and Serial EEPROM Characteristics
Symbol Parameter
Min
Typ⁽¹⁾
Max
t_PROG
Nonvolatile Register Program Time
1.0
5.0
t_WR
Serial EEPROM Write Cycle Time
3.0
5.0
t_COPYW Volatile to Nonvolatile Register Copy Time
1.0
5.0
t_COPYR
Nonvolatile to Volatile Register Copy Time
100
200
N_ENDUR Nonvolatile Register Program/Copy Endurance
50,000 100,000
S_ENDUR Serial EEPROM Write Endurance
1,000,000
Note: 1. Typical values characterized at V_CC = 3.3V, T_A = +25°C unless otherwise noted.
Units
ms
ms
ms
μs
Cycles
Cycles
12.7 Power-Up Conditions
Symbol Parameter
Min
Max
Units
t_POR
Power-On Reset Time
Power-Up Device Delay before Nonvolatile Register or Memory
t_PUW
Program Allowed
500
μs
500
μs
V_POR
t_PU
Power-On Reset Voltage Range
Maximum Allowable Power-Up Time
2.6
V
1⁽¹⁾
ms
Note: 1. Please reference the AT30TSE752A/754A/758A datasheet for devices that can accommodate power-up
(V_CC ramp) times longer than the specified value.
Figure 12-2. Power-Up Timing
V_CC
V_CC (min)
V_POR (max)
V_POR (min)
Do Not Attempt
Device Access
During this Time
t_PU
Device Access Permitted
t_POR
t_PUW
Time
AT30TSE752/754/758 [DATASHEET] 49
Atmel-8751F-DTS-AT30TSE752-754-758-Datasheet_092013