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ATR0635_08 Datasheet, PDF (30/35 Pages) ATMEL Corporation – ANTARIS4 Single-chip GPS Receiver SuperSense
10. Electrical Characteristics (Continued)
If no additional information is given in column Test Conditions, the values apply to temperature range from –40°C to +85°C.
No. Parameters
Test Conditions
Pin
Symbol Min
Typ
Max Unit Type*
6.7 Schmitt trigger hysteresis
6.8
Schmitt trigger threshold
rising
VDD18 = 1.65V to 1.95V
VDD18 = 1.65V to 1.95V
CLK23 Vhyst,CLK23 0.2
NRESET Vth+,NRESET 0.8
0.55
V
C
1.3
V
C
6.9
Schmitt trigger threshold
falling
VDD18 = 1.65V to 1.95V
NRESET Vth-,NRESET 0.46
0.77
V
C
6.10
Low-level input voltage
VDDIO domain
VDDIO = 1.65V to 3.6V
VIL,IO
–0.3
+0.41
V
C
6.11
High-level input voltage
VDDIO domain
VDDIO = 1.65V to 3.6V
VIH,IO
1.46
5.0
V
C
6.12
Low-level input voltage
VBAT18 domain
VBAT18 = 1.65V to 1.95V
A11, B10,
C10, D10
VIL,BAT
–0.3
+0.41
V
C
6.13
High-level input voltage
VBAT18 domain
VBAT18 = 1.65V to 1.95V
A11, B10,
C10, D10
VIH,BAT
1.46
5.0
V
C
6.14 Low-level input voltage USB VDD_USB = 3.0V to 3.6V
6.15
High-level input voltage
USB
VDD_USB = 3.0V to 3.6V
39Ω source resistance +
27Ω external series resistor
C9, D9
C9, D9
VIL,USB
VIH,USB
–0.3
2.0
+0.8
V
C
4.6
V
C
6.16
Low-level output voltage
VDD18 domain
IOL = 1.5 mA,
VDD18 = 1.65V
VOL,18
0.4
V
A
6.17
High-level output voltage
VDD18 domain
IOH = –1.5 mA,
VDD18 = 1.65V
VOH,18
VDD18
– 0.45
V
A
6.18
Low-level output voltage
VDDIO domain
IOL = 1.5 mA,
VDDIO = 3.0V
VOL,IO
0.4
V
A
6.19
High-level output voltage
VDDIO domain
IOH = –1.5 mA,
VDDIO = 3.0V
VOH,IO
VDDIO
– 0.5
V
A
6.20
Low-level output voltage
VBAT18 domain
IOL = 1 mA
P9, P13,
P22, P31
VOL,BAT
0.4
V
A
6.21
High-level output voltage
VBAT18 domain
IOH = –1 mA
P9, P13,
P22, P31
VOH,BAT
1.2
V
A
6.22
Low-level output voltage
USB
IOL = 2.2 mA,
VDD_USB = 3.0V to 3.6V, DP, DM
27Ω external series resistor
VOL,USB
0.3
V
A
6.23
High-level output voltage
USB
IOH = 0.2 mA,
VDD_USB = 3.0V to 3.6V, DP, DM
27Ω external series resistor
VOH,USB
2.8
V
A
6.24
Input-leakage current
(standard inputs and I/Os)
VDD18 = 1.95V
VIL = 0V
ILEAK
–1
+1
µA
C
6.25 Input capacitance
ICAP
10
pF
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. The LDO18 is a built in low dropout voltage regulator, which can be used if the host system does not provide the core volt-
age VDD18.
2. The LDOBAT is a built in low dropout voltage regulator, which provides the supply voltage VBAT18 for the RTC, backup
SRAM, P9, P13, P22, P31, NSLEEP and NSHDN. The LDOBAT voltage regulator switches in battery mode if LDOBAT_IN
falls below 1.5V.
3. Supply voltage VBAT18 for backup domain is generated internally by the LDOBAT.
4. If no current is caused by outputs (pad output current as well as current across internal pull-up resistors)
30 ATR0635
4928H–GPS–06/08