ATR0635 Datasheet, PDF (30/33 Pages) ATMEL Corporation – ANTARIS4 Single-chip GPS Receiver SuperSense

9. Electrical Characteristics (Continued)
If no additional information is given in column Test Conditions, the values apply to temperature range from –40°C to +85°C.
No. Parameters
Test Conditions
Pin
Symbol Min
Typ
Max
Unit
6.8
Schmitt trigger threshold
rising
VDD18 = 1.65V to 1.95V
NRESET V_th+,NRESET
0.8
1.3
V
6.9
Schmitt trigger threshold
falling
VDD18 = 1.65V to 1.95V
NRESET V_th-,NRESET 0.46
0.77
V
6.10
Low-level input voltage
VDDIO domain
VDDIO = 1.65V to 3.6V
V_IL,IO
–0.3
+0.41
V
6.11
High-level input voltage
VDDIO domain
VDDIO = 1.65V to 3.6V
V_IH,IO
1.46
5.0
V
6.12
Low-level input voltage
VBAT18 domain
VBAT18 = 1.65V to 1.95V
A11, B10,
C10, D10
V_IL,BAT
–0.3
+0.41
V
6.13
High-level input voltage
VBAT18 domain
VBAT18 = 1.65V to 1.95V
A11, B10,
C10, D10
V_IH,BAT
1.46
5.0
V
6.14
Low-level input voltage
USB
VDD_USB = 3.0V to 3.6V
C9, D9
V_IL,USB
–0.3
+0.8
V
6.15
High-level input voltage
USB
VDD_USB = 3.0V to 3.6V
39Ω source resistance +
27Ω external series resistor
C9, D9
V_IH,USB
2.0
3.6
V
6.16
Low-level output voltage
VDD18 domain
I_OL = 1.5 mA,
VDD18 = 1.65V
V_OL,18
0.4
V
6.17
High-level output voltage
VDD18 domain
I_OH = –1.5 mA,
VDD18 = 1.65V
V_OH,18
VDD18 –
0.45
V
6.18
Low-level output voltage
VDDIO domain
I_OL = 1.5 mA,
VDDIO = 3.0V
V_OL,IO
0.4
V
6.19
High-level output voltage
VDDIO domain
I_OH = –1.5 mA,
VDDIO = 3.0V
V_OH,IO
VDDIO –
0.5
V
6.20
Low-level output voltage
VBAT18 domain
I_OL = 1 mA
P9, P13,
P22, P31
V_OL,BAT
0.4
V
6.21
High-level output voltage
VBAT18 domain
I_OH = –1 mA
P9, P13,
P22, P31
V_OH,BAT
1.2
V
6.22
Low-level output voltage
USB
I_OL = 2.2 mA,
VDD_USB = 3.0V to 3.6V,
27Ω external series resistor
DP, DM
V_OL,USB
0.3
V
6.23
High-level output voltage
USB
I_OH = 0.2 mA,
VDD_USB = 3.0V to 3.6V,
27Ω external series resistor
DP, DM
V_OH,USB
2.8
V
6.24
Input-leakage current
VDD18 = 1.95V
(standard inputs and I/Os) V_IL = 0V
6.25 Input capacitance
6.26
Input pull-up resistor
NRESET
–40°C to +85°C
I_LEAK
–1
I_CAP
A7
R_PU
0.7
+1
µA
10
pF
1.8
kΩ
Notes: 1. The LDO18 is a built in low dropout voltage regulator, which can be used if the host system does not provide the core volt-
age VDD18.
2. The LDOBAT is a built in low dropout voltage regulator, which provides the supply voltage VBAT18 for the RTC, backup
SRAM, P9, P13, P22, P31, NSLEEP and NSHDN. The LDOBAT voltage regulator switches in battery mode if LDOBAT_IN
falls below 1.5V.
3. Supply voltage VBAT18 for backup domain is generated internally by the LDOBAT.
4. If no current is caused by outputs (pad output current as well as current across internal pull-up resistors)
30 ATR0635
4928C–GPS–06/06