ATMEGA169_14 Datasheet, PDF (276/365 Pages) ATMEL Corporation – Non-volatile Program and Data Memories

Reading the Flash
Reading the EEPROM
K: Repeat 3 through 5 until the entire buffer is filled.
L: Program EEPROM page
1. Set BS to “0”.
2. Give WR a negative pulse. This starts programming of the EEPROM page.
RDY/BSY goes low.
3. Wait until to RDY/BSY goes high before programming the next page (See Figure
122 for signal waveforms).
Figure 122. Programming the EEPROM Waveforms
K
DATA
XA1
XA0
BS1
XTAL1
WR
RDY/BSY
RESET +12V
OE
PAGEL
BS2
A
G
B
C
E
B
C
E
L
0x11
ADDR. HIGH ADDR. LOW
DATA
XX
ADDR. LOW
DATA
XX
The algorithm for reading the Flash memory is as follows (refer to “Programming the
Flash” on page 273 for details on Command and Address loading):
1. A: Load Command “0000 0010”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. Set OE to “0”, and BS1 to “0”. The Flash word low byte can now be read at DATA.
5. Set BS to “1”. The Flash word high byte can now be read at DATA.
6. Set OE to “1”.
The algorithm for reading the EEPROM memory is as follows (refer to “Programming the
Flash” on page 273 for details on Command and Address loading):
1. A: Load Command “0000 0011”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. Set OE to “0”, and BS1 to “0”. The EEPROM Data byte can now be read at
DATA.
5. Set OE to “1”.
276 ATmega169/V
2514P–AVR–07/06