TH7899M Datasheet, PDF (16/24 Pages) ATMEL Corporation – Full Field CCDImage Sensor 2048 x 20Pixels48

Electrical
Performance
Table 3. Static And Dynamic Electrical Characteristics
Value
Parameter
DC Output Level⁽¹⁾
Output Impedance⁽¹⁾
Symbol
Min
Vref
Zout
200
Typ
10.5
230
Max
250
Unit
Remarks
V
VDR = 13.5V; VS = 0V
Ω
Output Amplifier Supply
Current⁽²⁾
IDD
10
mA
VDD = 15V;
VDR = 13.5V; VS = 0V
Charge to Voltage Conversion
Factor
With VGL = 1V and VDR = 13.5V CVF1
6.6
7
7.4
µ V/e- For Standard Mode
With VGL = 12V and VDR = 15V CVF2
4.2
4.5
4.7
µ V/e- For Binning Mode
Image Zone To Readout
Register Frequency
FV
100
180
kHz
Without Reduction Of
Saturation Charge
Readout Register And Reset
Frequency
FH
5
20
MHz
Notes: 1. Measured on VOS1 VOS2 VOS3 and VOS4.
2. Measured in each VDD pin.
Electrooptical
Performance
General measurement conditions (unless specified):
• TC = 25°C (package temperature).
• Vertical transfer frequency FV = 100 kHz.
• Horizontal transfer frequency and output frequency FH = 5 MHz.
Illumination conditions:
• 3200K halogen lamp + 2 mm BG38 filter + F/3.5 aperture.
Table 4. Electro-optical Performance Characteristics
Value
Parameter
Symbol
Min
Typ
Max
Saturation Output Voltage
Without Binning
VSAT
1.4
1.9
Saturation Charge of Elementary
Pixel
Without Binning
QSAT
220
270
Saturation Charge of Readout
Registers
320
360
Saturation Charge of Summing
Gates ΦS
550
630
Saturation Level on the Output
Node
With VGL = 1V and VDR = 13.5V
With VGL = 12V and VDR = 15V
280
300
530
570
Unit
V
Remarks
(1)
ke-
(1)
ke-
(2)
ke-
(2)
(3)
ke-
For Standard Mode
ke-
For Binning Mode
16 TH7899M
2201A–IMAGE–02/02