MH1RT_14 Datasheet, PDF (14/19 Pages) ATMEL Corporation – Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

Table 8. 3V LVDS Driver DC/ AC Characteristics
Symbol
Parameter
Test Condition
T_A
V_DD
|VOD|
Operating Temperature
Supply Voltage
Output differential voltage
–
Core
Rload = 100Ω
VOS
Output offset voltage
Rload = 100Ω
|Delta VOD| ^{Change in |VOD|}
(1)
Rload = 100Ω
|Delta VOS|
(1)
Change in VOS: Steady-state _{Rload = 100Ω}
Change in VOS: Dynamic
state
ISA, ISB
Output current
Drivers shorted to ground or VDD
ISAB
Output current
Drivers shorted together
Rbias
Bias resistor
–
Ibias
Bias static current
–
F Max.
Maximum operating
frequency
VDD = 3V ± 0.3V
Clock
Clock signal duty cycle
Max. frequency
Tfall
Fall time 80-20%
Rload = 100Ω
Trise
Rise time 20-80%
Rload = 100Ω
Tp
Propagation delay
Rload = 100Ω
Tsk1
Duty cycle skew
Rload = 100Ω
Tsk2
Channel to channel skew
(same edge)
Rload = 100Ω
Min.
-55
2.7
247
622
0
0
0
1.0
2.6
12.8
6.5
–
45
512
512
1150
0
0
(1) Parameter guaranteed by design, not tested
Max.
125
3.3
454
1375
50
50
150
6.3
5
13.2
13.8
200
55
968
970
2300
70
50
Units
⋅C
V
mV
mV
Comments
–
–
see Figure 4
see Figure 4
mV
–
mV
–
mV
–
mA
mA
KΩ
mA
MHz
%
ps
ps
ps
ps
–
–
1 per chip
–
Consumption
18.6 mA
–
see Figure 4
see Figure 4
see Figure 4
–
ps
–
Table 9. 3.3V LVDS Driver DC/ AC Characteristics
Symbol
Parameter
Test Condition
T_A
V_DD
|VOD|
Operating Temperature
Supply Voltage
Output differential voltage
–
–
Rload = 100Ω
VOS
Output offset voltage
Rload = 100Ω
|Delta VOD| ^{Change in |VOD|}
(1)
Rload = 100Ω
Min.
-55
3
247
622
0
Max.
125
3.6
454
1375
50
Units
°C
V
mV
mV
mV
Comments
–
–
see Figure 4
see Figure 4
–
14 MH1RT
4110L–AERO–11/10