AT28BV64 Datasheet, PDF (1/8 Pages) ATMEL Corporation – 64K 8K x 8 Battery-Voltage CMOS E2PROM

AT28BV64
Features
• 2.7V to 3.6V Supply
Full Read and Write Operation
• Low Power Dissipation
8 mA Active Current
50 µA CMOS Standby Current
Read Access Time - 300 ns
• _{Byte Write - 3 ms}
•• _{Direct Microprocessor Control}
DATA Polling
READY/BUSY Open Drain Output
• High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
•• _{Commercial and Industrial Temperature Ranges}
Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read Only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50 µA.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
Pin Configurations
(continued)
PDIP, SOIC Top View
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
DC
Don’t Connect
64K (8K x 8)
Battery-Voltage^™
CMOS
E²PROM
AT28BV64
PLCC Top View
TSOP Top View
0493A
2-127